Sub-400 °C Si2H6Passivation, HfO2Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnxCMOS-Reference-Cited by-同舟云学术

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Sub-400 °C Si2H6Passivation, HfO2Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnxCMOS

Published:2013-05 Issue:5 Volume:60 Page:1640-1648
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gong Xiao,Han Genquan,Liu Bin,Wang Lanxiang,Wang Wei,Yang Yue,Kong Eugene Yu-Jin,Su Shaojian,Xue Chunlai,Cheng Buwen,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6504760/06504496.pdf?arnumber=6504496

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers;Applied Physics Letters;2019-10-21

2. Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum;Journal of Crystal Growth;2019-04

3. Sub- $10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ Specific Contact Resistivity (Down to $\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ ) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film;IEEE Transactions on Electron Devices;2018-12

4. Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process;IEEE Electron Device Letters;2018-09

5. Improved performance of Ge n + /p diode by combining laser annealing and epitaxial Si passivation;Chinese Physics B;2018-01

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