A nonlinear circuit model for IMPATT diodes-Reference-Cited by-同舟云学术

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A nonlinear circuit model for IMPATT diodes

Published:1978-05 Issue:5 Volume:25 Page:299-308
ISSN:0098-4094
Container-title:IEEE Transactions on Circuits and Systems
language:en
Short-container-title:IEEE Trans. Circuits Syst.

Author:

Gannett J.,Chua L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering

Link

http://xplorestaging.ieee.org/ielx5/31/23480/01084476.pdf?arnumber=1084476

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode;Japanese Journal of Applied Physics;2016-03-04

2. Power Synthesis at 110-GHz Frequency Based on Discrete Sources;IEEE Transactions on Microwave Theory and Techniques;2015-05

3. THE INVESTIGATION OF W BAND MICROSTRIP INTEGRATED HIGH ORDER FREQUENCY MULTIPLIER BASED ON THE NONLINEAR MODEL OF AVALANCHE DIODE;Progress In Electromagnetics Research;2008

4. Planar integrated W-band microstrip high order frequency multiplier based on avalanche diode;Electronics Letters;2008

5. The W-Band High Order Avalanche Diode Frequency Multiplier;International Journal of Infrared and Millimeter Waves;2007-05-31

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