Author:
Zhao Minghua,Fan Yong,Zhang Yonghong,He Zongrui
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation
Reference12 articles.
1. R. De La Cruz, and A. Zemliak, Characteristics of the double avalanche region IMPATT diode in millimetric range. Electronics, Communications and Computers, 2004. CONIELECOMP 2004. 14th International Conference on 16–18 Feb.2004, 223–227
2. G. P. Ermak, A. V. Varavin, and E. A. Alekseev, Phase locking of 2-mm wave sources upon high-order IMPATT multipliers. Int. J. Infrared. Millim. Waves. 24 (No.10), 1609−1615 (October 2003)
3. L. Kasatkin, V. Novozhylov,Effective high-order frequency multipliers on IMPATT diodes. Appl. Microw. Wirel. 14 (No.6), 32+34–36 (June 2002)
4. A. Z. Venger, A. N. Ermak, and A. M. Yakimenko, Frequency multiplier based on an avalanche-and-transit diode. Instrum. Exp. Tech. 23, 691–692 (May-June 1981)
5. J. Gannett, and L. Chua, A nonlinear circuit model for IMPATT diodes. Circuits and Systems, IEEE Transactions on, 25(Issue 5), 299–308 (May 1978)
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