Technical Challenges in MRAM Fabrication
Author:
Affiliation:
1. Zhejiang Chituo Technology Co., Ltd,Hangzhou,China,311300
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219264.pdf?arnumber=10219264
Reference6 articles.
1. First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces
2. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches
3. Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
4. Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process
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