Some Methods To Reduce Micro Scratch Defect For Via Contact Tungsten Chemical Mechanical Planarization Process
Author:
Affiliation:
1. Semiconductor Manufacturing North China(Beijing) Corporation No.18 WenChang Rd., Beijing Economic-Technological Development Area,China,100176
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219322.pdf?arnumber=10219322
Reference6 articles.
1. CMP defect reduction by micro-scratch control using new monitoring technique;neo;ISSM 2001,0
2. Impact of Bevel Condition on STI CMP Scratch
3. A scratch intersection model of material removal during chemical mechanical planarization (CMP);che;J Manuf Sci Eng,2004
4. Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification;luo;IEEE Transactions on Semiconductor Manufacturing,2003
5. Reduction the Micro-sized Scratches using Optimal Design of POU Dual Filtration at STI CMP
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