Impact of Bevel Condition on STI CMP Scratch
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9282274/9282383/09282450.pdf?arnumber=9282450
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CEO2 Slurry Post Rinse Condition Research in STI CMP Technology;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
2. Some Methods To Reduce Micro Scratch Defect For Via Contact Tungsten Chemical Mechanical Planarization Process;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
3. Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free;Scientific Reports;2021-09-06
4. Advanced Physical Failure Analysis Techniques for Rescuing Damaged Samples with Cracks, Scratches, or Unevenness in Delayering;Advances in Science, Technology and Engineering Systems Journal;2021-07
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