Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film-Reference-Cited by-同舟云学术

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Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

Published:2014-09 Issue:9 Volume:35 Page:909-911
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Jyun-Bao,Bao Ding-Hua,Chang Ting-Chang,Huang Jheng-Jie,Chen Yu-Ting,Tseng Hsueh-Chih,Chu Ann-Kuo,Sze Simon M.,Tsai Ming-Jinn,Zheng Jin-Cheng

Funder

National Science Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6881771/06868961.pdf?arnumber=6868961

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multibit, Lead‐Free Cs₂SnI₆ Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application;Advanced Functional Materials;2023-12-28

2. Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory;IEEE Transactions on Electron Devices;2022-01

3. Design of wafer-scale uniform Au nanotip array by ion irradiation for enhanced single conductive filament resistive switching;Nano Energy;2020-01

4. Influence of Nitrogen Concentration on Self-Compliance Resistive Switching in Ta/SiNx /Pt RRAM Devices;physica status solidi (a);2018-06-20

5. Comparative study of Al2O3, HfO2, and HfAlOxfor improved self-compliance bipolar resistive switching;Journal of the American Ceramic Society;2017-08-07

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