New approach for comparing Modular Multilevel Converter submodule losses considering IGBT and SiC MOSFET devices-Reference-Cited by-同舟云学术

New approach for comparing Modular Multilevel Converter submodule losses considering IGBT and SiC MOSFET devices

Published:2022-10-17 Issue: Volume: Page:
ISSN:
Container-title:IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society
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Author:

Guicharrousse Pablo¹,Rishad Ahmed Md.¹,Wheeler Patrick¹,Zanchetta Pericle¹

Affiliation:

1. University of Nottingham,Power Electronics, Machines and Control Research Group,Nottingham,UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9968313/9968303/09968842.pdf?arnumber=9968842

Reference35 articles.

1. Capacitance and inductance selection of the modular multilevel converter

2. Optimum Design Guidelines for the Modular Multilevel Converter in Active Front-End Applications: Considerations for Passive Component Reduction

3. Analysis of multi-carrier PWM methods for back-to-back HVDC systems based on modular multilevel converters

4. Advanced 2N+1 Submodule Unified PWM with Reduced DC-Link Current Ripple for Modular Multilevel Converters;yu;IEEE Transactions on Power Electronics,2021

5. Silicon Carbide MOSFET, N-Channel Enhancement Mode;G2R50MT33K datasheet,2021

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