Minimization of reverse recovery effects in hard-switched inverters using CoolMOS power switches-Reference-Cited by-同舟云学术

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Minimization of reverse recovery effects in hard-switched inverters using CoolMOS power switches

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Container-title:Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)
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Author:

Hongrae Kim ,Jahns T.M.,Venkataramanan G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7586/20672/00955487.pdf?arnumber=955487

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superjunction MOSFET with an N-Dot Region in the P-Pillar for Soft Reverse Recovery;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance;IEEE Transactions on Electron Devices;2023

3. Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs;IEEE Electron Device Letters;2022-12

4. A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery;IEEE Transactions on Electron Devices;2021-05

5. Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices;IEEE Transactions on Power Electronics;2021-03

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