Investigation of photovoltaic characteristics performance of p-InGaN/n-InGaN single junction solar cells using SCAPS 1D-Reference-Cited by-同舟云学术

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Investigation of photovoltaic characteristics performance of p-InGaN/n-InGaN single junction solar cells using SCAPS 1D

Published:2023-05-06 Issue: Volume:2015 Page:1-4
ISSN:
Container-title:2023 1st International Conference on Renewable Solutions for Ecosystems: Towards a Sustainable Energy Transition (ICRSEtoSET)
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Author:

Bellakhdar Aissa.¹,Birane Mouhoub.¹,Selmane Naceur.¹,Cheknane Ali.¹,Telia Azeddine.²

Affiliation:

1. Université Amar Telidji,Laboratoire Matériaux, Systèmes Énergétiques, Énergies Renouvelables et Gestion de l'Énergie (LMSEERGE),Département d'Electronique,Laghouat,Algérie

2. Université des Frères Mentouri,Laboratoire des Microsystèmes et Instrumentation,Département d’Electronique, Faculté de Technologie,Constantine,Algeria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10525261/10525264/10525344.pdf?arnumber=10525344

Reference19 articles.

1. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

3. Characterization of InGaN-based photovoltaic devices by varying the indium contents

4. Structure and electronic properties of InN and In-rich group III-nitride alloys

5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

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