A Novel Method for Measuring Thickness of Silicon Epitaxial Layer on Silicon Substrate

Author:

Hua Younan1,Liu Binghai1,Liao Lois1,Xiaodan Luo2,Liu Yuanyuan2,Zhang Linhua3,Liu Lingxiao3,Li Xiaomin1

Affiliation:

1. Wintech Nano-Technology Services Pte Ltd,Singapore,117684

2. Wintech-Nano (Nanjing) Co., Ltd.,Nanjing,China,210000

3. Wintech-Nano (Suzhou) Co., Ltd.,Suzhou,China,215123

Publisher

IEEE

Reference9 articles.

1. Wet Chemical Etching of Si, Si1?xGex, and Ge in HF:H2O2:CH3COOH;holländer;Journal of The Electrochemical Society,2010

2. Two-dimensional Chemical Delineation of Junction Profile with High Spatial Resolution and Application in Failure Analysis in 65nm Technology Node;binghai;the Proceedings from the 216th Electrochemical Society Meeting October 4-9 2009 Vienna Austria “ECS Transactions”,2009

3. Chemical Etching of Si1 − x Ge x in  HF  :  H 2 O 2 :  CH 3 COOH

4. Resistivity profile of epitaxial layer for the new ALICE ITS sensor

5. In-line FTIR for epitaxial silicon film thickness measurement on an Applied Materials Centura cluster tool

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