A Novel Method for Measuring Thickness of Silicon Epitaxial Layer on Silicon Substrate
Author:
Affiliation:
1. Wintech Nano-Technology Services Pte Ltd,Singapore,117684
2. Wintech-Nano (Nanjing) Co., Ltd.,Nanjing,China,210000
3. Wintech-Nano (Suzhou) Co., Ltd.,Suzhou,China,215123
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249182.pdf?arnumber=10249182
Reference9 articles.
1. Wet Chemical Etching of Si, Si1?xGex, and Ge in HF:H2O2:CH3COOH;holländer;Journal of The Electrochemical Society,2010
2. Two-dimensional Chemical Delineation of Junction Profile with High Spatial Resolution and Application in Failure Analysis in 65nm Technology Node;binghai;the Proceedings from the 216th Electrochemical Society Meeting October 4-9 2009 Vienna Austria “ECS Transactions”,2009
3. Chemical Etching of Si1 − x Ge x in HF : H 2 O 2 : CH 3 COOH
4. Resistivity profile of epitaxial layer for the new ALICE ITS sensor
5. In-line FTIR for epitaxial silicon film thickness measurement on an Applied Materials Centura cluster tool
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