GaN HEMT based Ku-band Power Amplifier MMIC
Author:
Affiliation:
1. Solid State Physics Lab. (SSPL),Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10046662/10046419/10047238.pdf?arnumber=10047238
Reference10 articles.
1. Power amplifier MMICs for 15 GHz microwave links in 0.25 üm GaN technology
2. Ku-Band 25 W High Power Amplifier using 0.25 ?m GaN Technology;gedela;2020 15th European Microwave Integrated Circuits Conference (EuMIC),0
3. A Ku-band 20 W GaN-MMIC amplifier with built-in linearizer
4. GaN Takes the Lead
5. Linear broadband GaN MMICs for Ku-band Applications
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1. A Ku-Band 100-W High-Power Amplifier MMIC Using 0.2-µm GaN Technology;IEEE Microwave and Wireless Technology Letters;2024-01
2. Design and development of a Ku-Band MMIC transmit receive front end chip;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11
3. Study of variation in Insertion Loss and Isolation on Indigenous GaN HEMT Switch as a function of Device Geometry;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11
4. Ku-Band GaN Power Amplifier MMIC for SATCOM;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-11
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