Linear broadband GaN MMICs for Ku-band Applications
Author:
Affiliation:
1. EADS Deutschland GmbH, Defence Electronics, 89077 Ulm, Germany
2. Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, 79108 Freiburg, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4014788/4014789/04015168.pdf?arnumber=4015168
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GaN HEMT based Ku-band Power Amplifier MMIC;2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2022-12-12
2. 2-W Broadband GaN Power-Amplifier RFIC Using the $f_{T}$ Doubling Technique and Digitally Assisted Distortion Cancellation;IEEE Transactions on Microwave Theory and Techniques;2013-01
3. Noise performance in AlGaN/GaN HEMTs under high drain bias;Journal of Semiconductors;2009-08
4. Thermal Study of the High-Frequency Noise in GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2009-01
5. An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design;IEEE Transactions on Microwave Theory and Techniques;2008-08
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