Advances of Gate Stack Technology in MOSFETs
Author:
Affiliation:
1. Dalhousie University Halifax,Nova Scotia,Canada
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10015896/10015907/10015955.pdf?arnumber=10015955
Reference13 articles.
1. A Two-Dimensional (2D) Analytical Modeling and Improved Short Channel Performance of Graded-Channel Gate-Stack (GCGS) Dual-Material Double-Gate (DMDG) MOSFET
2. Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance
3. Threshold Voltage Roll-Off Due to Channel Length Reduction for a Nanoscale n-channel FinFET;hossain,2013
4. Low-subthreshold-swing tunnel transistors
5. Short-Channel Effects in Mosfets;kumar;SpringerLink Springer India,1970
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