Interfacial Microstructure Evolution of Indium Jointed with Different Surface Finishes after Thermal Treatments
Author:
Affiliation:
1. Corporate R & D / Siliconware Precision Industries Co., Ltd. (SPIL) No. 153, Sec. 3, Chung Shan Rd., Tantzu, Taichung, Taiwan 427,R.O.C.,Taiwan (R.O.C.),33743
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9966654/9966628/09966633.pdf?arnumber=9966633
Reference7 articles.
1. Indium thermal interface material development for microprocessors
2. Metal Thermal Interface Material for the Next Generation FCBGA
3. Artifact-free microstructures of the Cu–In reaction by using cryogenic broad argon beam ion polishing
4. Wafer-level low temperature bonding with Au-In system
5. Electroplated Indium Bump Arrays and the Bonding Reliability;qiuping;Journal of Semiconductors,2010
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