High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth-Reference-Cited by-同舟云学术

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High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

Published:2016-05-01 Issue:9 Volume:34 Page:2139-2144
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Li Qinglong,Li Kejia,Fu Yang,Xie Xiaojun,Yang Zhanyu,Beling Andreas,Campbell Joe C.

Funder

DARPA and AFRL

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/7444222/7389323.pdf?arnumber=7389323

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