Thin high-k dielectric layers deposited by ALD-Reference-Cited by-同舟云学术

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Thin high-k dielectric layers deposited by ALD

Published:2009-02 Issue: Volume: Page:
ISSN:
Container-title:2009 Spanish Conference on Electron Devices
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Author:

Campabadal F.,Zabala M.,Rafi J.M.,Acero M.C.,Sainchez A.,Sainchez J.,Sainchez S.,Andreu R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4799072/4800405/04800421.pdf?arnumber=4800421

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combination of ultraviolet exposure and thermal post-treatment to obtain high quality HfO2 thin films;Ceramics International;2021-04

2. Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01

3. Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates;Microelectronic Engineering;2015-11

4. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon;Thin Solid Films;2013-05

5. 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics;Solid-State Electronics;2013-01

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