Design and Fabrication of Rad-hard Low Power CMOS Temperature Sensor for Space Applications at 180nm-Reference-Cited by-同舟云学术

Design and Fabrication of Rad-hard Low Power CMOS Temperature Sensor for Space Applications at 180nm

Published:2021-12-19 Issue: Volume: Page:
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Container-title:2021 International Conference on Microelectronics (ICM)
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Author:

Yadav Ashutosh,Bulusu Anand,Dasgupta Sudeb,Singh Surinder

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9664825/9664893/09664963.pdf?arnumber=9664963

Reference7 articles.

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2. A 0.7 V Relative Temperature Sensor With a Non-Calibrated $\pm 1~^{\circ}{\rm C}$ 3$\sigma$ Relative Inaccuracy

3. An ultra-low power 1 V, 220 nW temperature sensor for passive wireless applications;lin;Proceedings of the IEEE Custom Integrated Circuits Conference,2008

4. 65 nW CMOS temperature sensor for ultra-low power microsystems;jeong;Proceedings of the IEEE Custom Integrated Circuits Conference,2013

5. An Ultralow Power Time-Domain Temperature Sensor With Time-Domain Delta–Sigma TDC

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