Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology-Reference-Cited by-同舟云学术

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

Published:2024-01-19 Issue:2 Volume:13 Page:429
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Szermer Michał¹^ORCID,Jankowski Mariusz¹^ORCID,Janicki Marcin¹^ORCID

Affiliation:

1. Department of Microelectronics and Computer Science, Faculty of Electrical, Electronic, Computer and Control Engineering, Lodz University of Technology, 93-005 Lodz, Poland

Abstract

This paper presents the design of an integrated temperature sensor. The sensor was manufactured using the 3 µm CMOS technology. The proportional to absolute temperature sensor output signal was produced by two MOS transistors with biasing and buffering circuits. The sensor output voltage was linearly proportional to the absolute temperature in a wide range of temperature values. The measurement results coincide very well with the results of the process corner analysis. Certain non-linearities occurring at high temperature values are investigated in this paper in more detail. Additionally, the influence of neighboring circuits present in the manufactured integrated circuit on the sensor temperature response is studied.

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-9292/13/2/429/pdf

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