300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology-Reference-Cited by-同舟云学术

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300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology

Published:2012-10 Issue:10 Volume:33 Page:1438-1440
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qiao Ming,Zhou Xin,He Yitao,Wen Hengjuan,Zhao Yuanyuan,Zhang Bo,Li Zhaoji

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06268317.pdf?arnumber=6268317

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model for high-k SOI pLDMOS with self-adaptive balance of polarization charge;Microelectronics Journal;2023-02

2. Experiments of Homogenization Field LDMOS With Trench-Stopped Depletion;IEEE Transactions on Electron Devices;2022-05

3. TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs;IEEE Transactions on Nuclear Science;2020-07

4. Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer;IEICE Electronics Express;2020

5. Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS;Results in Physics;2019-12

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