A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs-Reference-Cited by-同舟云学术

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A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs

Published:2012-04 Issue:4 Volume:33 Page:543-545
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Uhm Hyun-Seok,Lee Sang-Hyuk,Kim Won,Park Jin-Seok

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6172299/06157598.pdf?arnumber=6157598

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Optimization of IGZO-Based Junctionless Thin Film Transistor for Low Power Application;Advances in Sustainability Science and Technology;2022-10-02

2. Design and Analysis of IGZO Based Junctionless Thin Film Transistor Using SOI Technology;Silicon;2020-11-05

3. High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments;Journal of the Society for Information Display;2020-04-27

4. Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO_2-x-based Thin-Film Transistors Deposited by RF Magnetron Sputtering;Korean Journal of Metals and Materials;2019-07-05

5. Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors;Thin Solid Films;2016-12

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