Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO<sub>2-x</sub>-based Thin-Film Transistors Deposited by RF Magnetron Sputtering-Reference-Cited by-同舟云学术

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Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO_2-x-based Thin-Film Transistors Deposited by RF Magnetron Sputtering

Published:2019-07-05 Issue:7 Volume:57 Page:438-446
ISSN:1738-8228
Container-title:Korean Journal of Metals and Materials
language:en
Short-container-title:Korean J. Met. Mater.

Author:

Kim Han-Sang,Lee Jae-Yun,Kim Sung-Jin

Funder

National Research Foundation of Korea

Ministry of Education

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

Publisher

The Korean Institute of Metals and Materials

Subject

Metals and Alloys,Surfaces, Coatings and Films,Modeling and Simulation,Electronic, Optical and Magnetic Materials

Link

http://kjmm.org/upload/pdf/kjmm-2019-57-7-438.pdf

Reference30 articles.

1. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

2. Wavy Channel TFT-Based Digital Circuits

3. Influence of Fast Charging on Accuracy of Mobility in ${a}$ -InHfZnO Thin-Film Transistor

4. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

5. Effect of Nitrogen Doping on the Electrical Performance of Amorphous Si–In–Zn–O Thin Film Inverter

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1. A Study on the Stability of TiO2 Nanoparticles as an Electron Transport Layer in Quantum Dot Light-Emitting Diodes;Korean Journal of Metals and Materials;2021-07-05

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