Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer-Reference-Cited by-同舟云学术

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Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer

Published:2012-06 Issue:6 Volume:33 Page:803-805
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Dai-Ying,Tseng Tseung-Yuen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6203434/06196172.pdf?arnumber=6196172

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1. Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory;IEEE Transactions on Electron Devices;2022-01

2. Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application;Gels;2021-12-27

3. Crystal structure and ion transport properties of solid electrolyte CsAg4Br3-I2+ (0 < x < 1);Solid State Ionics;2021-06

4. Microstructure and mechanical properties of atomic layer deposited alumina doped zirconia;AIP Advances;2021-05-01

5. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution;Nanoscale;2020

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