Radiation-Hardened Cortex-R4F System-on-Chip Prototype With Total Ionizing Dose Dynamic Compensation in 28-nm FD-SOI-Reference-Cited by-同舟云学术

Radiation-Hardened Cortex-R4F System-on-Chip Prototype With Total Ionizing Dose Dynamic Compensation in 28-nm FD-SOI

Published:2021-05 Issue:5 Volume:68 Page:1040-1044
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Abouzeid Fady^ORCID,de Boissac Capucine Lecat-Mathieu^ORCID,Malherbe Victor,Daveau Jean-Marc,Asquini Anna^ORCID,Bertin Valerie^ORCID,De-Paoli Serge^ORCID,Gasiot Gilles^ORCID,Timineri Calogero,Autran Jean-Luc^ORCID,Roche Philippe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9434988/09395493.pdf?arnumber=9395493

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation effects and radiation hardening technology of new microsystems;SCIENTIA SINICA Physica, Mechanica & Astronomica;2024-02-04

2. Radiation Evaluation of LEON5FT/NOEL-VFT Demonstrator on STM 28nm-FDSOI Technology;2023 European Data Handling & Data Processing Conference (EDHPC);2023-10-02

3. Radiation-hardened triple-modular redundant field programmable gate array with a two-phase clock;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

4. A RISC-V System-on-Chip with Embedded Adaptive Power–Performance–Fault-Tolerance Hardware;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

5. Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors;IEEE Transactions on Nuclear Science;2022-03