Enhancement of the Virtual Metrology Performance for Plasma-Assisted Oxide Etching Processes by Using Plasma Information (PI) Parameters-Reference-Cited by-同舟云学术

Enhancement of the Virtual Metrology Performance for Plasma-Assisted Oxide Etching Processes by Using Plasma Information (PI) Parameters

Published:2015-08 Issue:3 Volume:28 Page:241-246
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Park Seolhye,Jeong Sangmin,Jang Yunchang,Ryu Sangwon,Roh Hyun-Joon,Kim Gon-Ho

Funder

IT Research and Development Program of MOTIE/KEIT (Development of equipment control based on plasma monitoring for efficiency improvement of 10 nm etch process)

National Research Foundation of Korea Grant

Brain Korea 21 Plus Project

Samsung Display

Samsung Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/66/7169643/07105914.pdf?arnumber=7105914

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