A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT-Reference-Cited by-同舟云学术

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A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

Published:1989-11 Issue:11 Volume:10 Page:511-513
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Huang J.C.,Zaitlin M.,Hoke W.,Adlerstein M.,Lyman P.,Saledas P.,Jackson G.,Tong E.,Flynn G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1650/00043120.pdf?arnumber=43120

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFETs and GaAs pseudomorphic HEMTs;IEEE Transactions on Electron Devices;1996-06

2. Molecular-beam epitaxial growth of high quality, double channel AlGaAs/InGaAs pulse-doped pseudomorphic high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-03

3. Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application;IEEE Transactions on Electron Devices;1992-03

4. Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz;Applied Physics Letters;1991-06-10

5. Does the two‐dimensional electron gas effect contribute to high‐frequency and high‐speed performance of field‐effect transistors?;Applied Physics Letters;1990-09-17

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