High Q inductors and capacitors on Si substrate-Reference-Cited by-同舟云学术

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High Q inductors and capacitors on Si substrate

Published: Issue: Volume: Page:
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Container-title:2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)
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Author:

Jenei S.,Decoutere S.,Van Huylenbroeck S.,Vanhorebeek G.,Nauwelaers B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7484/20342/00942342.pdf?arnumber=942342

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

2. Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO2Thin Films for MIM Capacitors;IEEE Electron Device Letters;2017-03

3. Energy-Efficient Clocking Based on Resonant Switching for Low-Power Computation;IEEE Transactions on Circuits and Systems I: Regular Papers;2014-05

4. Impact of Top (Pt, Au, and Al) Electrodes on HfAlO[sub x]-Based MIM Capacitors;Journal of The Electrochemical Society;2011

5. High Density MIM Capacitors Using HfAlOx;ECS Transactions;2009-09-25

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