III–V FET channel designs for high current densities and thin inversion layers-Reference-Cited by-同舟云学术

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III–V FET channel designs for high current densities and thin inversion layers

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:68th Device Research Conference
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Author:

Rodwell Mark,Frensley W.,Steiger S.,Chagarov E.,Lee S.,Ryu H.,Tan Y.,Hegde G.,Wang L,Law J.,Boykin T.,Klimek G.,Asbeck P.,Kummel A.,Schulman J. N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5543947/5551849/05551882.pdf?arnumber=5551882

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