Study of Damage Engineering—Quantitative Scatter Defect Measurements of Ultralow Energy Implantation Doping Using the Continuous Anodic Oxidation Technique/Differential Hall Effect
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Published:2012-03
Issue:3
Volume:40
Page:877-882
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ISSN:0093-3813
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Container-title:IEEE Transactions on Plasma Science
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language:
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Short-container-title:IEEE Trans. Plasma Sci.
Author:
Qin Shu,McTeer Allen,Hu Yongjun Jeff,Prussin Si,Reyes Jason
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Condensed Matter Physics,Nuclear and High Energy Physics
Cited by
1 articles.
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