Surface Modification of Si Wafer by Low-Pressure High-Frequency Plasma Chemical Vapor Deposition Method-Reference-Cited by-同舟云学术

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Surface Modification of Si Wafer by Low-Pressure High-Frequency Plasma Chemical Vapor Deposition Method

Published:2011-06 Issue:6 Volume:39 Page:1427-1431
ISSN:0093-3813
Container-title:IEEE Transactions on Plasma Science
language:
Short-container-title:IEEE Trans. Plasma Sci.

Author:

Yuji Toshifumi,Mungkung Narong,Kiyota Yuichi,Uesugi Daishiro,Kawano Minobu,Nakabayashi Kenichi,Kataoka Hisaaki,Suzaki Yoshifumi,Kashihara Nobuki,Akatsuka Hiroshi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Condensed Matter Physics,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/27/5871430/05762638.pdf?arnumber=5762638

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analysis of Low-Pressure High-Frequency Plasma Chemical Vapor Deposition System for Flexible Solar Cell Characteristics;Applied Mechanics and Materials;2015-04

2. Development of low-pressure high-frequency plasma chemical vapor deposition method on surface modification of silicon wafer;Vacuum;2014-11

3. Low-Temperature Naturatron Sputtering System for Deposition of Indium Tin Oxide Film;IEEE Transactions on Plasma Science;2014-10

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