A Switchless Frequency-Reconfigurable Broadband Power Amplifier in 0.13-µm SiGe BiCMOS
Author:
Affiliation:
1. Tianjin University,School of Microelectronics
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10275796/10276388/10277482.pdf?arnumber=10277482
Reference9 articles.
1. A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE
2. New Technique for Synthesizing Concurrent Dual-Band Impedance-Matching Filtering Networks and ${\hbox{0.18-}}\mu{\hbox {m}}$ SiGe BiCMOS 25.5/37-GHz Concurrent Dual-Band Power Amplifier
3. A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications
4. A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications
5. Millimeter-Wave Frequency Reconfigurable Dual-Band CMOS Power Amplifier for 5G Communication Radios
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