Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains
Author:
Affiliation:
1. National Yang-Ming Chiao Tung University,Parallel and Scientific Computing Laboratory,Hsinchu,Taiwan,300
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103042.pdf?arnumber=10103042
Reference10 articles.
1. Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties
2. Neural Network-Based and Modeling With High Accuracy and Potential Model Speed
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation;IEEE Transactions on Electron Devices;2024-01
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