Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time
Author:
Affiliation:
1. Indian Institute of Technology,Madras
2. The Ohio State University,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103006.pdf?arnumber=10103006
Reference9 articles.
1. Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
2. 650V 7 mOhm SiC MOSFET development for dual-side power modules in electric drive vehicles;hayes;Proc PCIM Europe 20187 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2017
3. A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
4. Quick Design of a Superjunction Considering Charge Imbalance Due to Process Variations
5. Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
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