Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer-Reference-Cited by-同舟云学术

Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer

Published:2023-03-07 Issue: Volume: Page:
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Container-title:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Saini Shalu¹,Dwivedi Anurag¹,Lodhi Anil¹,Khandelwal Arpit¹,Tiwari Shree Prakash¹

Affiliation:

1. Indian Institute of Technology Jodhpur,Department of Electrical Engineering,Jodhpur,Rajasthan,India,342037

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103025.pdf?arnumber=10103025

Reference12 articles.

1. Molybdenum diselenide (MoSe 2 ) for energy storage, catalysis, and optoelectronics

2. Electrical, linear and nonlinear optical properties of MoSe2/PVA nanocomposites as charge trapping elements for memory device applications;kaur;Journal of Alloys and Compounds,2022

3. Ultralow Current Switching in Flexible Hybrid PVP:MoS2/HfO x Bilayer Devices

4. TiO 2 thin film based transparent flexible resistive switching random access memory

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1. Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe₂ Active Layer;ACS Applied Electronic Materials;2024-08-30

2. Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems;ACS Nano;2024-05-20

3. Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS₂/TiO₂ Bilayer;IEEE Transactions on Electron Devices;2024-05

4. Implementation of Stable Nonvolatile Resistive Switching Behaviors in TiO₂ Nanoparticle‐Incorporated 2D Layered Halide Perovskite‐Based Devices;physica status solidi (a);2023-11-05