Ferroelectric-like Behaviors of Mobile-Ionic Field-Effect Transistors with Amorphous Dielectrics
Author:
Affiliation:
1. Research Center for Intelligent Chips and Devices, Zhejiang Lab,China
2. School of Microelectronics, Xidian University,China
3. School of Micro-Nano Electronics, Zhejiang University,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10102947.pdf?arnumber=10102947
Reference7 articles.
1. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
2. Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor
3. Ferroelectric FET analog synapse for acceleration of deep neural network training
4. Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide
5. Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO2 Dielectric for Spiking Neural Network Applications
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