Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide-Reference-Cited by-同舟云学术

Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide

Published:2021-07-29 Issue:10 Volume:7 Page:2100414
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Feng Ze¹^ORCID,Peng Yue²,Shen Yang³,Li Zhiyun³,Wang Hu³,Chen Xiao³,Wang Yitong¹,Jing Meiyi¹,Lu Feng¹,Wang Weihua¹,Cheng Yahui¹,Cui Yi³,Dingsun An³,Han Genquan²,Liu Hui¹,Dong Hong¹^ORCID

Affiliation:

1. Engineering Research Center of Thin Film Optoelectronics Technology Ministry of Education Nankai University Tianjin 300350 China

2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 China

3. Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Suzhou 215123 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100414

Reference40 articles.

1. Ferroelectric Memories

2. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

3. Ferroelectricity in undoped hafnium oxide

4. Ferroelectricity in hafnium oxide thin films

5. Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen-induced tunable remanent polarization in a perovskite nickelate;Nature Communications;2024-06-03

2. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices;Science China Information Sciences;2024-05-21

3. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides;Materials Futures;2024-05-16

4. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics;Science China Information Sciences;2023-08-31

5. A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics;IEEE Transactions on Magnetics;2023-05