Saturation RRAM Leveraging Bit-Level Sparsity Resulting from Term Quantization-Reference-Cited by-同舟云学术

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Saturation RRAM Leveraging Bit-Level Sparsity Resulting from Term Quantization

Published:2021-05 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

McDanel Bradley,Zhang Sai Qian,Kung H. T.

Funder

Air Force Research Laboratory

Advanced Research Projects Agency

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9401028/9401051/09401293.pdf?arnumber=9401293

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Harnessing RRAM Technology for Efficient AI Implementation;Recent Advances in Neuromorphic Computing [Working Title];2024-09-02

2. RAELLA: Reforming the Arithmetic for Efficient, Low-Resolution, and Low-Loss Analog PIM: No Retraining Required!;Proceedings of the 50th Annual International Symposium on Computer Architecture;2023-06-17

3. A Bit-level Sparsity-aware SAR ADC with Direct Hybrid Encoding for Signed Expressions for AIoT Applications;ACM/IEEE International Symposium on Low Power Electronics and Design;2022-08

4. Domain Specific ReRAM Computation-in-Memory Design Considering Bit Precision and Memory Errors for Simulated Annealing;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

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