Temperature Analysis on Short Channel Effects of Modified NCFET : A Simulation Study
Author:
Affiliation:
1. Delhi Technological University,Microelectronics Research Lab,Department of Applied Physics,Delhi,India,110042
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865098/9865099/09865782.pdf?arnumber=9865782
Reference17 articles.
1. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
2. Ultralow-Voltage Bilayer Graphene Tunnel FET
3. Use of negative capacitance to provide voltage amplification for low power nanoscale devices;salahuddin;Nano Lett,2008
4. Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior
5. Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Self-Consistent LCAO Based DFT Analysis of High-k Spacers and its Assessment on Gate-Stacked NCFET for Improved Device-Circuit Performance;Silicon;2024-06-29
2. DFT based atomic modeling and temperature analysis on the RF and VTC curve of high-k dielectric layer-assisted NCFET;Physica Scripta;2023-12-29
3. DFT based atomic modeling and Analog/RF analysis of ferroelectric HfO2 based improved FET device;Physica Scripta;2023-07-20
4. Impact of Temperature on Negative Capacitance FET: A TCAD Simulation Study;2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON);2023-02-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3