Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits-Reference-Cited by-同舟云学术

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Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

Published:1998 Issue:10 Volume:46 Page:1436-1443
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Jae-Kyung Wee ,Young-June Park ,Hong-Shick Min ,Dae-Hyung Cho ,Man-Ho Seung ,Hun-Sug Park

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx4/22/15574/00721145.pdf?arnumber=721145

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. S-Parameter-Measurement-Based Time-Domain Signal Transient and Crosstalk Noise Characterizations of Coupled Transmission Lines;IEEE Transactions on Advanced Packaging;2009-02

3. Fully Analytical Modeling of Cu Interconnects up to 110 GHz;Japanese Journal of Applied Physics;2008-04-25

4. Ferromagnetic Thin Films for Loss Reduction in On-Chip Transmission Lines;IEEE Transactions on Magnetics;2007-06

5. S-parameters-based high speed signal characterization of Al and Cu interconnect on low-k hydrogen silsesquioxane-Si substrate;2007 International Microsystems, Packaging, Assembly and Circuits Technology;2007

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