Fully Analytical Modeling of Cu Interconnects up to 110 GHz-Reference-Cited by-同舟云学术

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Fully Analytical Modeling of Cu Interconnects up to 110 GHz

Published:2008-04-25 Issue:4 Volume:47 Page:2473-2476
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jin Jun-De,Hsu Shawn S. H.,Yeh Tzu-Jin,Yang Ming-Ta,Liu Sally

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. High-speed VLSI interconnect modeling based on S-parameter measurements

2. A unified rlc model for high-speed on-chip interconnects

3. Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

4. Accurate analytic expressions for frequency-dependent inductance and resistance of single on-chip interconnects on conductive silicon substrate

5. CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Wideband Model for On-Chip Interconnects With Different Shielding Structures;IEEE Transactions on Components, Packaging and Manufacturing Technology;2017-10

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