A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization-Reference-Cited by-同舟云学术

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A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization

Published:2017-01 Issue:1 Volume:52 Page:240-249
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Song Taejoong^ORCID,Rim Woojin,Park Sunghyun,Kim Yongho,Yang Giyong,Kim Hoonki,Baek Sanghoon,Jung Jonghoon,Kwon Bongjae,Cho Sungwee,Jung Hyuntaek,Choo Yongjae,Choi Jaeseung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7811159/07725555.pdf?arnumber=7725555

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