170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier-Reference-Cited by-同舟云学术

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170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

Published:2015-10 Issue:10 Volume:50 Page:2228-2238
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Testa Paolo Valerio,Belfiore Guido,Paulo Robert,Carta Corrado,Ellinger Frank

Funder

Deutsche Forschungsgemeinschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7279217/07163635.pdf?arnumber=7163635

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 10–230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs;IEEE Microwave and Wireless Technology Letters;2024-06

2. A $>$120-GHz Bandwidth, $>$20-dBm Pout, $<$6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2024

3. Loss-Compensated Cascaded Multistage Distributed Power Amplifier in 65nm CMOS Technology;IEEE Access;2024

4. A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. A 182 GHz Triple-Stacked Distributed Amplifier in InP HBT Process;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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