High-Efficiency SiGe-BiCMOS $E$ -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage
Author:
Funder
RF Department, HiSilicon, Shenzhen, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/8769979/08695750.pdf?arnumber=8695750
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiGe BiCMOS D-Band Heterodyne Power Mixer With Back-Off Efficiency Enhanced by Current Clamping;IEEE Solid-State Circuits Letters;2024
2. A 36–91 GHz Broadband Beamforming Transmitter Architecture With Phase Error Between 1.2°–2.8° for Joint Communication and Sensing;IEEE Transactions on Microwave Theory and Techniques;2024-01
3. A Ka-Band SiGe High-Gain Power Amplifier With Stability–Efficiency–Reliability-Enhanced Serial–Parallel Current-Reuse Technique;IEEE Transactions on Microwave Theory and Techniques;2024
4. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up;IEEE Journal of Solid-State Circuits;2023-09
5. A Bandpass Power Amplifier Applying Transformer-Based Filtering Combiner in 0.5-μm GaAs pHEMT;IEEE Microwave and Wireless Technology Letters;2023-07
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