SiGe BiCMOS D-Band Heterodyne Power Mixer With Back-Off Efficiency Enhanced by Current Clamping
Author:
Affiliation:
1. Department of Electrical, Computer and Biomedical Engineering, University of Pavia, Pavia, Italy
2. Automotive and Discrete Group (ADG), STMicroelectronics SRL, Pavia, Italy
Funder
European Community within the KDT Project SHIFT
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8011414/10359146/10319335.pdf?arnumber=10319335
Reference13 articles.
1. A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band
2. Fully Integrated 2D Scalable TX/RX Chipset for D-Band Phased-Array-on-Glass Modules
3. An LTE transmitter using a class-A/B power mixer
4. High-Efficiency SiGe-BiCMOS $E$ -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage
5. D-Band SiGe BiCMOS Power Amplifier With 16.8dBm P₁dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages
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