A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology-Reference-Cited by-同舟云学术

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A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology

Published:2015-01 Issue:1 Volume:50 Page:150-157
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Hamzaoglu Fatih,Arslan Umut,Bisnik Nabhendra,Ghosh Swaroop,Lal Manoj B.,Lindert Nick,Meterelliyoz Mesut,Osborne Randy B.,Park Joodong,Tomishima Shigeki,Wang Yih,Zhang Kevin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6998099/06912029.pdf?arnumber=6912029

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