XNOR-SRAM: In-Memory Computing SRAM Macro for Binary/Ternary Deep Neural Networks-Reference-Cited by-同舟云学术

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XNOR-SRAM: In-Memory Computing SRAM Macro for Binary/Ternary Deep Neural Networks

Published:2020 Issue: Volume: Page:1-11
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yin Shihui^ORCID,Jiang Zhewei^ORCID,Seo Jae-Sun^ORCID,Seok Mingoo^ORCID

Funder

NSF

Wei Family Private Foundation

Catalyst Foundation

Center for Brain-Inspired Computing C-BRIC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/4359912/08959407.pdf?arnumber=8959407

Cited by 278 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ISSA: Architecting CNN Accelerators Using Input-Skippable, Set-Associative Computing-in-Memory;IEEE Transactions on Computers;2024-09

2. SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration;IEEE Transactions on Electron Devices;2024-09

3. FLEX-CIM: A Flexible Kernel Size 1-GHz 181.6-TOPS/W 25.63-TOPS/mm² Analog Compute-in-Memory Macro;IEEE Journal of Solid-State Circuits;2024-09

4. A Compute-in-Memory Annealing Processor With Interaction Coefficient Reuse and Sparse Energy Computation for Solving Combinatorial Optimization Problems;IEEE Journal of Solid-State Circuits;2024-09

5. Ternary Logic Circuit and Neural Network Integration via Small Molecule‐Based Antiambipolar Vertical Electrochemical Transistor;Advanced Materials;2024-08-13

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