Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Author:

Bonaldo StefanoORCID,Mattiazzo SerenaORCID,Enz ChristianORCID,Baschirotto Andrea,Fleetwood Daniel M.ORCID,Paccagnella AlessandroORCID,Gerardin SimoneORCID

Funder

Scaltech28 Experiment

Istituto Nazionale di Fisica Nucleare - INFN

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Time-over-Threshold based analog front-end in 28 nm CMOS for pixel detectors in future colliders;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-12

2. Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-08

3. Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si);IEEE Transactions on Electron Devices;2024-06

4. The LHCb VELO Upgrade II: design and development of the readout electronics;Journal of Instrumentation;2024-05-01

5. Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses;IEEE Transactions on Nuclear Science;2024-04

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