Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching

Published:2017-02 Issue:1 Volume:26 Page:135-142
ISSN:1057-7157
Container-title:Journal of Microelectromechanical Systems
language:
Short-container-title:J. Microelectromech. Syst.

Author:

Dowling Karen M.^ORCID,Ransom Elliot H.^ORCID,Senesky Debbie G.^ORCID

Funder

National Science Foundation Engineering Research Center for Power Optimization of Electro Thermal Systems

National Science Foundation Graduate Research Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://ieeexplore.ieee.org/ielaam/84/7839304/7738546-aam.pdf

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of surface evolution in plasma etching for SiC microgroove fabrication;Ceramics International;2024-09

2. Etch of nano-TSV with smooth sidewall and excellent selection ratio for backside power delivery network;Microelectronic Engineering;2024-09

3. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04

4. A high aspect ratio surface micromachined accelerometer based on a SiC-CNT composite material;Microsystems & Nanoengineering;2024-03-22

5. Helium Ion‐Assisted Wet Etching of Silicon Carbide with Extremely Low Roughness for High‐Quality Nanofabrication;Small Methods;2024-01-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP