Etch of nano-TSV with smooth sidewall and excellent selection ratio for backside power delivery network

Author:

Wang Yang,Liu Ziyu,Sun Yabin,Chen Lin,Sun Qingqing

Funder

Swiss Tumor Institute

Ministry of Industry and Information Technology of the People's Republic of China

Publisher

Elsevier BV

Reference18 articles.

1. Buried Power Rails and Nano-Scale TSV: Technology Boosters for Backside Power Delivery Network and 3D Heterogeneous Integration;Jourdain,2022

2. Power delivery network (PDN) modeling for backside-PDN configurations with buried power rails and uTSVs;Hossen;IEEE Trans. Electron Dev.,2020

3. A holistic evaluation of buried power rails and Back-side power for Sub-5 nm technology nodes;Nibhanupudi;IEEE Trans. Electr. Dev.,2022

4. G. Sisto, R. Preston, R. Chen et al., "Block-level Evaluation and Optimization of Backside PDN for High-Performance Computing at the A14 node." 1–2.

5. Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network;Chen,2022

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