Author:
Kanale Ajit,Cheng Tzu-Hsuan,Shah Suyash Sushilkumar,Han Kijeong,Agarwal Aditi,Baliga B. Jayant,Hopkins Douglas,Bhattacharya Subhashish
Cited by
6 articles.
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2. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06
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5. Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09